IT1111981B - Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante - Google Patents
Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultanteInfo
- Publication number
- IT1111981B IT1111981B IT20139/79A IT2013979A IT1111981B IT 1111981 B IT1111981 B IT 1111981B IT 20139/79 A IT20139/79 A IT 20139/79A IT 2013979 A IT2013979 A IT 2013979A IT 1111981 B IT1111981 B IT 1111981B
- Authority
- IT
- Italy
- Prior art keywords
- polaries
- ceo
- reversal
- protected
- power supply
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20139/79A IT1111981B (it) | 1979-02-13 | 1979-02-13 | Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante |
| FR8001519A FR2449335A1 (fr) | 1979-02-13 | 1980-01-24 | Structure de transistor pnp lateral pour haute tension v(br)ceo, protege contre une inversion des polarites d'alimentation et produit resultant |
| GB8002603A GB2042259B (en) | 1979-02-13 | 1980-01-25 | Lateral pnp transistor |
| US06/120,923 US4319262A (en) | 1979-02-13 | 1980-02-12 | Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode |
| JP1560280A JPS55111166A (en) | 1979-02-13 | 1980-02-13 | Lateral npn transistor |
| DE19803005367 DE3005367A1 (de) | 1979-02-13 | 1980-02-13 | Lateraler pnp-transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20139/79A IT1111981B (it) | 1979-02-13 | 1979-02-13 | Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7920139A0 IT7920139A0 (it) | 1979-02-13 |
| IT1111981B true IT1111981B (it) | 1986-01-13 |
Family
ID=11164126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20139/79A IT1111981B (it) | 1979-02-13 | 1979-02-13 | Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4319262A (en]) |
| JP (1) | JPS55111166A (en]) |
| DE (1) | DE3005367A1 (en]) |
| FR (1) | FR2449335A1 (en]) |
| GB (1) | GB2042259B (en]) |
| IT (1) | IT1111981B (en]) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852347B2 (ja) * | 1980-02-04 | 1983-11-22 | 株式会社日立製作所 | 高耐圧半導体装置 |
| FR2575333B1 (fr) * | 1984-12-21 | 1987-01-23 | Radiotechnique Compelec | Dispositif de protection d'un circuit integre contre les decharges electrostatiques |
| GB2201543A (en) * | 1987-02-25 | 1988-09-01 | Philips Electronic Associated | A photosensitive device |
| JPH01126144U (en]) * | 1988-02-22 | 1989-08-29 | ||
| US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
| US5610079A (en) * | 1995-06-19 | 1997-03-11 | Reliance Electric Industrial Company | Self-biased moat for parasitic current suppression in integrated circuits |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3197710A (en) * | 1963-05-31 | 1965-07-27 | Westinghouse Electric Corp | Complementary transistor structure |
| FR1400150A (fr) * | 1963-07-08 | 1965-05-21 | Rca Corp | Dispositifs semi-conducteurs perfectionnés |
| US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
| US3651565A (en) * | 1968-09-09 | 1972-03-28 | Nat Semiconductor Corp | Lateral transistor structure and method of making the same |
| US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
| US4125853A (en) * | 1977-03-28 | 1978-11-14 | Bell Telephone Laboratories, Incorporated | Integrated circuit transistor |
| JPS5643005Y2 (en]) * | 1978-12-26 | 1981-10-08 |
-
1979
- 1979-02-13 IT IT20139/79A patent/IT1111981B/it active
-
1980
- 1980-01-24 FR FR8001519A patent/FR2449335A1/fr active Granted
- 1980-01-25 GB GB8002603A patent/GB2042259B/en not_active Expired
- 1980-02-12 US US06/120,923 patent/US4319262A/en not_active Expired - Lifetime
- 1980-02-13 DE DE19803005367 patent/DE3005367A1/de active Granted
- 1980-02-13 JP JP1560280A patent/JPS55111166A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4319262A (en) | 1982-03-09 |
| GB2042259A (en) | 1980-09-17 |
| GB2042259B (en) | 1983-09-01 |
| IT7920139A0 (it) | 1979-02-13 |
| JPS6239547B2 (en]) | 1987-08-24 |
| DE3005367C2 (en]) | 1988-01-07 |
| DE3005367A1 (de) | 1980-08-21 |
| FR2449335A1 (fr) | 1980-09-12 |
| FR2449335B1 (en]) | 1983-02-04 |
| JPS55111166A (en) | 1980-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970227 |